2N2432AUB
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- BJTS
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1mA, 5V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- 4-SMD, No Lead
- Part Status :
- Active
- Power - Max :
- 360mW
- Series :
- -
- Supplier Device Package :
- UB
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Datasheets
- 2N2432AUB
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