2SA1013-O,T6MIBF(J
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- TRANS PNP 1A 160V TO226-3
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA, 5V
- Frequency - Transition :
- 50MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 900mW
- Series :
- -
- Supplier Device Package :
- TO-92L
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Datasheet :
- 2SA1013-O,T6MIBF(J
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