2301

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

300mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA, 5V

Frequency - Transition :

2.3GHz

Gain :

8dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55BT

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

5.6W

Series :

-

Supplier Device Package :

55BT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

45V