2SA1312GRTE85LF
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- TRANS PNP 120V 0.1A S-MINI
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 6V
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 125°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 150mW
- Series :
- -
- Supplier Device Package :
- S-Mini
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Datasheet :
- 2SA1312GRTE85LF
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