HN1B04F(TE85L,F)
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Arrays
- Description
- TRANS NPN/PNP 30V 0.5A SM6
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 100mA, 1V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SC-74, SOT-457
- Packaging :
- Digi-Reel®
- Part Status :
- Obsolete
- Power - Max :
- 300mW
- Series :
- -
- Supplier Device Package :
- SM6
- Transistor Type :
- NPN, PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Datasheet :
- HN1B04F(TE85L,F)
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|---|---|---|---|
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| HN1B01FU-GR,LF | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 50V 0.15A US6-PLN |
| HN1B01FU-Y(L,F,T) | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 50V 0.15A US6 |
| HN1B01FU-Y(L,F,T) | Toshiba Semiconductor and Storage | 32 | TRANS NPN/PNP 50V 0.15A US6 |
| HN1B01FU-Y(L,F,T) | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 50V 0.15A US6 |
| HN1B04F(TE85L,F) | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 30V 0.5A SM6 |
| HN1B04F(TE85L,F) | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 30V 0.5A SM6 |
| HN1B04FE-GR,LF | Toshiba Semiconductor and Storage | 5,000 | TRANS NPN/PNP 50V 0.15A ES6 |