2N3811L

Manufacturer :

Microsemi Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-78-6 Metal Can

Packaging :

Bulk

Part Status :

Obsolete

Power - Max :

350mW

Series :

-

Supplier Device Package :

TO-78-6

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100µA, 1mA

Voltage - Collector Emitter Breakdown (Max) :

60V