HN3C51F-BL(TE85L,F
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - Arrays
- Description
- TRANS 2NPN 120V 0.1A SM6
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 350 @ 2mA, 6V
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SC-74, SOT-457
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power - Max :
- 300mW
- Series :
- -
- Supplier Device Package :
- SM6
- Transistor Type :
- 2 NPN (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Datasheet :
- HN3C51F-BL(TE85L,F
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 5,000 | RF TRANS 2 NPN 12V 7GHZ US6 |
| HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 161 | RF TRANS 2 NPN 12V 7GHZ US6 |
| HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 5,000 | RF TRANS 2 NPN 12V 7GHZ US6 |
| HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 5,000 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51FBLTE85LF | TOSH | 30,000 | Integrated Circuit |