HN3C10FUTE85LF
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - RF
- Description
- RF TRANS 2 NPN 12V 7GHZ US6
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 11.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- -
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 200mW
- Series :
- -
- Supplier Device Package :
- US6
- Transistor Type :
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheets
- HN3C10FUTE85LF
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 161 | RF TRANS 2 NPN 12V 7GHZ US6 |
| HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 5,000 | RF TRANS 2 NPN 12V 7GHZ US6 |
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