RS3JHM6G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 600V 3A DO214AB
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 500ns
- Series :
- Automotive, AEC-Q101
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3V @ 3A
- Datasheet :
- RS3JHM6G
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RS3J | GS | 30,000 | Integrated Circuit |
| RS3J M6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J R7G | Taiwan Semiconductor | 4,250 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J R7G | Taiwan Semiconductor | 4,250 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J R7G | Taiwan Semiconductor | 4,250 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V7G | Taiwan Semiconductor | 850 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V7G | Taiwan Semiconductor | 830 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 600V 3A SMC |
| RS3J-13-F | Diodes Incorporated | 9,000 | DIODE GEN PURP 600V 3A SMC |
| RS3J-13-F | Diodes Incorporated | 9,379 | DIODE GEN PURP 600V 3A SMC |
| RS3J-13-F | Diodes Incorporated | 9,379 | DIODE GEN PURP 600V 3A SMC |
| RS3J-E3/57T | Vishay Semiconductor/Diodes Division | 2,550 | DIODE GEN PURP 600V 3A DO214AB |
| RS3J-E3/57T | Vishay Semiconductor/Diodes Division | 3,367 | DIODE GEN PURP 600V 3A DO214AB |