HS3K M6G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 800V 3A DO214AB
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 50pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10µA @ 800V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 800V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 3A
- Datasheet :
- HS3K M6G
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
HS3K R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 800V 3A DO214AB |
HS3K R7G | Taiwan Semiconductor | 810 | DIODE GEN PURP 800V 3A DO214AB |
HS3K R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 800V 3A DO214AB |
HS3K V6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 800V 3A DO214AB |
HS3K V7G | Taiwan Semiconductor | 850 | DIODE GEN PURP 800V 3A DO214AB |
HS3K V7G | Taiwan Semiconductor | 658 | DIODE GEN PURP 800V 3A DO214AB |
HS3K V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 800V 3A DO214AB |
HS3KB M4G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 800V 3A DO214AA |
HS3KB R5G | Taiwan Semiconductor | 850 | DIODE GEN PURP 800V 3A DO214AA |
HS3KB R5G | Taiwan Semiconductor | 1,259 | DIODE GEN PURP 800V 3A DO214AA |
HS3KB R5G | Taiwan Semiconductor | 1,259 | DIODE GEN PURP 800V 3A DO214AA |