HS3J M6G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 600V 3A DO214AB
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 50pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 3A
- Datasheet :
- HS3J M6G
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Part | Manufacturer | Stock | Description |
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HS3J R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
HS3J V6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
HS3J V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AB |
HS3J-K M6G | Taiwan Semiconductor | 5,000 | 75NS, 3A, 600V, HIGH EFFICIENT R |
HS3JB M4G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 3A DO214AA |
HS3JB R5G | Taiwan Semiconductor | 2,550 | DIODE GEN PURP 600V 3A DO214AA |
HS3JB R5G | Taiwan Semiconductor | 2,798 | DIODE GEN PURP 600V 3A DO214AA |
HS3JB R5G | Taiwan Semiconductor | 2,798 | DIODE GEN PURP 600V 3A DO214AA |