D850N34TXPSA1

Manufacturer
Infineon Technologies
Product Category
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 3.4KV 850A
Manufacturer :
Infineon Technologies
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
850A
Current - Reverse Leakage @ Vr :
50mA @ 3400V
Diode Type :
Standard
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-40°C ~ 160°C
Package / Case :
DO-200AB, B-PUK
Packaging :
Bulk
Part Status :
Obsolete
Series :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
-
Voltage - DC Reverse (Vr) (Max) :
3400V
Voltage - Forward (Vf) (Max) @ If :
1.28V @ 850A
Datasheet :
D850N34TXPSA1

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
D850-15I US-Lasers, Inc. 5,000 LASER DIODE 850NM 15MW TO18
D8505I US-Lasers, Inc. 18 LASER DIODE 850NM 5MW TO18
D850N28TXPSA1 Infineon Technologies 5,000 DIODE GEN PURP 2.8KV 850A
D850N30TXPSA1 Infineon Technologies 5,000 DIODE GEN PURP 3KV 850A
D850N32TXPSA1 Infineon Technologies 5,000 DIODE GEN PURP 3.2KV 850A
D850N36TXPSA1 Infineon Technologies 5,000 DIODE GEN PURP 3.6KV 850A
D850N40TXPSA1 Infineon Technologies 5,000 DIODE GEN PURP 4KV 850A