8EWS16S
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 1.6KV 8A DPAK
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 8A
- Current - Reverse Leakage @ Vr :
- 50µA @ 1600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 150°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tube
- Part Status :
- Obsolete
- Series :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- D-Pak
- Voltage - DC Reverse (Vr) (Max) :
- 1600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 8A
- Datasheets
- 8EWS16S
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|---|---|---|---|
| 8EWS08S | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 800V 8A DPAK |
| 8EWS08S | IR | 50,000 | Integrated Circuit |
| 8EWS08STR | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 800V 8A DPAK |
| 8EWS08STRL | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 800V 8A DPAK |
| 8EWS08STRL | IR | 50,000 | Integrated Circuit |
| 8EWS08STRR | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 800V 8A DPAK |
| 8EWS10S | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1KV 8A DPAK |
| 8EWS10STRL | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1KV 8A DPAK |
| 8EWS12S | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1.2KV 8A DPAK |
| 8EWS12STRL | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1.2KV 8A DPAK |
| 8EWS16STRL | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 1.6KV 8A DPAK |