1N5820US

Manufacturer
Microsemi Corporation
Product Category
Diodes - Rectifiers - Single
Description
DIODE SCHOTTKY 20V 3A B-MELF
Manufacturer :
Microsemi Corporation
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
100µA @ 20V
Diode Type :
Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 125°C
Package / Case :
SQ-MELF, B
Packaging :
Bulk
Part Status :
Discontinued at Digi-Key
Series :
-
Speed :
Fast Recovery = 200mA (Io)
Supplier Device Package :
B, SQ-MELF
Voltage - DC Reverse (Vr) (Max) :
20V
Voltage - Forward (Vf) (Max) @ If :
500mV @ 3A
Datasheet :
1N5820US

Manufacturer related products

  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    RF ATTENUATOR 50OHM
  • Microsemi Corporation
    RF ATTENUATOR 17DB 50OHM
  • Microsemi Corporation
    IC MAC DUAL 10G XAUI MAC FCBGA

Catalog related products

related products

Part Manufacturer Stock Description
1N5802 Microsemi Corporation 317 DIODE GEN PURP 50V 1A AXIAL
1N5802 Semtech 5,000 DIODE GEN PURP 50V 3.3A AXIAL
1N5802JANTX MSC 50,000 Integrated Circuit
1N5802US Microsemi Corporation 102 DIODE GEN PURP 50V 1A D5A
1N5802US Semtech 5,000 DIODE GEN PURP 50V 1.1A
1N5803 Microsemi Corporation 5,000 DIODE GEN PURP 75V 1A AXIAL
1N5804 Microsemi Corporation 616 DIODE GEN PURP 100V 1A AXIAL
1N5804 Semtech 5,000 DIODE GEN PURP 100V 3.3A AXIAL
1N5804US Microsemi Corporation 22 DIODE GEN PURP 100V 1A D5A
1N5804US Semtech 5,000 DIODE GEN PURP 100V 1.1A
1N5805 Microsemi Corporation 5,000 DIODE GEN PURP 125V 1A AXIAL
1N5806 Semtech 5,000 DIODE GEN PURP 150V 3.3A AXIAL
1N5806/TR Microsemi Corporation 5,000 UFR,FRR
1N5806C.TR Semtech 5,000 DIODE GEN PURP 150V 2.5A AXIAL
1N5806C.TR Semtech 283 DIODE GEN PURP 150V 2.5A AXIAL