S12JR
- Manufacturer
- GeneSiC Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP REV 600V 12A DO4
- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 12A
- Current - Reverse Leakage @ Vr :
- 10µA @ 50V
- Diode Type :
- Standard, Reverse Polarity
- Mounting Type :
- Chassis, Stud Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- DO-203AA, DO-4, Stud
- Packaging :
- Bulk
- Part Status :
- Active
- Series :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- DO-4
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1V @ 12A
- Datasheet :
- S12JR
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Part | Manufacturer | Stock | Description |
---|---|---|---|
S12J | GeneSiC Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO4 |
S12JC M6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC R7G | Taiwan Semiconductor | 480 | DIODE GEN PURP 600V 12A DO214AB |
S12JC R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC V6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JC V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
S12JCHM6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 600V 12A DO214AB |
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