S3DHM6G

Manufacturer
Taiwan Semiconductor
Product Category
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 200V 3A DO214AB
Manufacturer :
Taiwan Semiconductor
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
30pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
5µA @ 200V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-214AB, SMC
Packaging :
Tape & Reel (TR)
Part Status :
Active
Reverse Recovery Time (trr) :
1.5µs
Series :
Automotive, AEC-Q101
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
DO-214AB (SMC)
Voltage - DC Reverse (Vr) (Max) :
200V
Voltage - Forward (Vf) (Max) @ If :
1.15V @ 3A
Datasheet :
S3DHM6G

Manufacturer related products

  • Taiwan Semiconductor
    HALL EFFECT SWITCH, LATCH, 2.5 -
  • Taiwan Semiconductor
    HALL EFFECT SWITCH, UNIPOLAR, 3
  • Taiwan Semiconductor
    HALL EFFECT SWITCH, UNIPOLAR, 3
  • Taiwan Semiconductor
    HALL EFFECT SWITCH, UNIPOLAR, 3
  • Taiwan Semiconductor
    HALL EFFECT SWITCH, LATCH, 2.5 -

Catalog related products

related products

Part Manufacturer Stock Description
S3DHE3/57T Vishay Semiconductor/Diodes Division 5,000 DIODE GEN PURP 200V 3A DO214AB
S3DHE3/9AT Vishay Semiconductor/Diodes Division 5,000 DIODE GEN PURP 200V 3A DO214AB
S3DHE3_A/H Vishay Semiconductor/Diodes Division 5,000 DIODE GEN PURP 200V 3A DO214AB
S3DHE3_A/I Vishay Semiconductor/Diodes Division 5,000 DIODE GEN PURP 200V 3A DO214AB
S3DHE3_A/I Vishay Semiconductor/Diodes Division 3,467 DIODE GEN PURP 200V 3A DO214AB
S3DHE3_A/I Vishay Semiconductor/Diodes Division 3,467 DIODE GEN PURP 200V 3A DO214AB
S3DHM3_A/H Vishay Semiconductor/Diodes Division 5,000 3A 200V SMC STD GPP SM RECT
S3DHM3_A/I Vishay Semiconductor/Diodes Division 5,000 3A 200V SMC STD GPP SM RECT
S3DHR7G Taiwan Semiconductor 5,000 DIODE GEN PURP 200V 3A DO214AB