BYG20DHE3_A/I
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE AVALANCHE 200V 1.5A DO214
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 1.5A
- Current - Reverse Leakage @ Vr :
- 1µA @ 200V
- Diode Type :
- Avalanche
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- Automotive, AEC-Q101
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Voltage - Forward (Vf) (Max) @ If :
- 1.4V @ 1.5A
- Datasheet :
- BYG20DHE3_A/I
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|---|---|---|---|
| BYG20D | PB-FREE | 30,000 | Integrated Circuit |
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| BYG20D R3G | Taiwan Semiconductor | 1,205 | DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D R3G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D-E3/TR | Vishay Semiconductor/Diodes Division | 18,000 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR | Vishay Semiconductor/Diodes Division | 18,097 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR | Vishay Semiconductor/Diodes Division | 18,097 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 | Vishay Semiconductor/Diodes Division | 7,500 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 | Vishay Semiconductor/Diodes Division | 7,500 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 | Vishay Semiconductor/Diodes Division | 7,500 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-M3/TR | Vishay Semiconductor/Diodes Division | 5,000 | DIODE AVALANCHE 200V 1.5A |
| BYG20D-M3/TR3 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE AVALANCHE 200V 1.5A |
| BYG20DE3TR3 | VISHAY | 30,000 | Integrated Circuit |
| BYG20DHE3_A/H | Vishay Semiconductor/Diodes Division | 5,000 | DIODE AVALANCHE 200V 1.5A DO214 |