UFS110JE3/TR13

Manufacturer
Microsemi Corporation
Product Category
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 100V 1A DO214BA
Manufacturer :
Microsemi Corporation
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5µA @ 100V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
DO-214BA
Packaging :
Tape & Reel (TR)
Part Status :
Active
Reverse Recovery Time (trr) :
30ns
Series :
-
Speed :
Fast Recovery = 200mA (Io)
Supplier Device Package :
DO-214BA
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
950mV @ 1A
Datasheet :
UFS110JE3/TR13

Manufacturer related products

  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    MMIC ATTENUATOR DIE
  • Microsemi Corporation
    RF ATTENUATOR 50OHM
  • Microsemi Corporation
    RF ATTENUATOR 17DB 50OHM
  • Microsemi Corporation
    IC MAC DUAL 10G XAUI MAC FCBGA

Catalog related products

related products

Part Manufacturer Stock Description
UFS105JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 50V 1A DO214BA
UFS115JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 150V 1A DO214BA
UFS120JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 200V 1A DO214BA
UFS130JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 300V 1A DO214BA
UFS140JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 400V 1A DO214BA
UFS150JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 500V 1A DO214BA
UFS160JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 600V 1A DO214BA
UFS170JE3/TR13 Microsemi Corporation 5,000 DIODE GEN PURP 700V 1A DO214BA
UFS180JE3/TR13 Microsemi Corporation 3,000 DIODE GEN PURP 800V 1A DO214BA
UFS180JE3/TR13 Microsemi Corporation 4,407 DIODE GEN PURP 800V 1A DO214BA
UFS180JE3/TR13 Microsemi Corporation 4,407 DIODE GEN PURP 800V 1A DO214BA