ES1D-E3/5AT
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 200V 1A DO214AC
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 10pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5µA @ 200V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 25ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Voltage - Forward (Vf) (Max) @ If :
- 920mV @ 1A
- Datasheet :
- ES1D-E3/5AT
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| ES1D | ON Semiconductor | 829,019 | DIODE GEN PURP 200V 1A SMA |
| ES1D | ON Semiconductor | 829,019 | DIODE GEN PURP 200V 1A SMA |
| ES1D | ON Semiconductor | 829,019 | DIODE GEN PURP 200V 1A SMA |
| ES1D | GI | 30,000 | Integrated Circuit |
| ES1D M2G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D R3G | Taiwan Semiconductor | 3,600 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D R3G | Taiwan Semiconductor | 3,956 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D R3G | Taiwan Semiconductor | 3,956 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 200V 1A SMA |
| ES1D-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 200V 1A SMA |
| ES1D-13-F | Diodes Incorporated | 132,184 | DIODE GEN PURP 200V 1A SMA |
| ES1D-13-F | Diodes Incorporated | 132,184 | DIODE GEN PURP 200V 1A SMA |
| ES1D-13-F | Diodes Incorporated | 132,184 | DIODE GEN PURP 200V 1A SMA |
| ES1D-E3/5AT | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 200V 1A DO214AC |
| ES1D-E3/5AT | Vishay Semiconductor/Diodes Division | 1,926 | DIODE GEN PURP 200V 1A DO214AC |