CMH07(TE12L,Q,M)
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 200V 2A M-FLAT
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 2A
- Current - Reverse Leakage @ Vr :
- 10µA @ 200V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 150°C
- Package / Case :
- SOD-128
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 100ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- M-FLAT (2.4x3.8)
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Voltage - Forward (Vf) (Max) @ If :
- 980mV @ 2A
- Datasheet :
- CMH07(TE12L,Q,M)
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| CMH01(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 200V 3A M-FLAT |
| CMH02A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 3A M-FLAT |
| CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 200V 1A MFLAT |
| CMH05(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 1A M-FLAT |
| CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 1A MFLAT |
| CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 1A MFLAT |
| CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 1A MFLAT |
| CMH08(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 2A M-FLAT |
| CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 5,000 | DIODE GEN PURP 400V 2A MFLAT |
| CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 1,447 | DIODE GEN PURP 400V 2A MFLAT |
| CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage | 1,447 | DIODE GEN PURP 400V 2A MFLAT |