HS3D V6G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 200V 3A DO214AB
- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 80pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 3A
- Current - Reverse Leakage @ Vr :
- 10µA @ 200V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AB, SMC
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 50ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AB (SMC)
- Voltage - DC Reverse (Vr) (Max) :
- 200V
- Datasheet :
- HS3D V6G
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HS3D M6G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AB |
| HS3D R7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AB |
| HS3D V7G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AB |
| HS3D-K M6G | Taiwan Semiconductor | 5,000 | 50NS, 3A, 200V, HIGH EFFICIENT R |
| HS3DB M4G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AA |
| HS3DB R5G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AA |
| HS3DB R5G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AA |
| HS3DB R5G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 200V 3A DO214AA |