EGL41AHE3_A/I
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 50V 1A DO213AB
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 20pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5µA @ 50V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- DO-213AB, MELF (Glass)
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 50ns
- Series :
- Automotive, AEC-Q101, Superectifier®
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-213AB
- Voltage - DC Reverse (Vr) (Max) :
- 50V
- Voltage - Forward (Vf) (Max) @ If :
- 1V @ 1A
- Datasheet :
- EGL41AHE3_A/I
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EGL41A-E3/96 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO213AB |
| EGL41A-E3/97 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO213AB |
| EGL41AHE3/96 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO213AB |
| EGL41AHE3/97 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO213AB |
| EGL41AHE3_A/H | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 50V 1A DO213AB |
| EGL41B-E3/96 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41B-E3/96 | Vishay Semiconductor/Diodes Division | 374 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41B-E3/96 | Vishay Semiconductor/Diodes Division | 374 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41B-E3/97 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41B/1 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41BHE3/96 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41BHE3/97 | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41BHE3_A/H | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41BHE3_A/I | Vishay Semiconductor/Diodes Division | 5,000 | DIODE GEN PURP 100V 1A DO213AB |
| EGL41C | GS | 30,000 | Integrated Circuit |