US1B-13-F

Manufacturer
Diodes Incorporated
Product Category
Diodes - Rectifiers - Single
Description
DIODE GEN PURP 100V 1A SMA
Manufacturer :
Diodes Incorporated
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5µA @ 100V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 150°C
Package / Case :
DO-214AC, SMA
Packaging :
Digi-Reel®
Part Status :
Active
Reverse Recovery Time (trr) :
50ns
Series :
-
Speed :
Fast Recovery = 200mA (Io)
Supplier Device Package :
SMA
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
1V @ 1A
Datasheet :
US1B-13-F

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
US1B VISHAY 50,000 Integrated Circuit
US1B M2G Taiwan Semiconductor 5,000 DIODE GEN PURP 100V 1A DO214AC
US1B R3G Taiwan Semiconductor 3,600 DIODE GEN PURP 100V 1A DO214AC
US1B R3G Taiwan Semiconductor 3,880 DIODE GEN PURP 100V 1A DO214AC
US1B R3G Taiwan Semiconductor 3,880 DIODE GEN PURP 100V 1A DO214AC
US1B-13 Diodes Incorporated 5,000 DIODE GEN PURP 100V 1A SMA
US1B-13 Diodes Incorporated 5,000 DIODE GEN PURP 100V 1A SMA
US1B-13 Diodes Incorporated 5,000 DIODE GEN PURP 100V 1A SMA
US1B-13-F Diodes Incorporated 70,000 DIODE GEN PURP 100V 1A SMA
US1B-13-F Diodes Incorporated 71,379 DIODE GEN PURP 100V 1A SMA
US1B-E3/5AT Vishay Semiconductor/Diodes Division 5,000 DIODE GEN PURP 100V 1A DO214AC
US1B-E3/5AT Vishay Semiconductor/Diodes Division 6,840 DIODE GEN PURP 100V 1A DO214AC
US1B-E3/5AT Vishay Semiconductor/Diodes Division 6,840 DIODE GEN PURP 100V 1A DO214AC
US1B-E3/61T Vishay Semiconductor/Diodes Division 10,800 DIODE GEN PURP 100V 1A DO214AC
US1B-E3/61T Vishay Semiconductor/Diodes Division 11,466 DIODE GEN PURP 100V 1A DO214AC