ES2B-E3/52T
- Manufacturer
- Vishay Semiconductor/Diodes Division
- Product Category
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 100V 2A DO214AA
- Manufacturer :
- Vishay Semiconductor/Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 18pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 2A
- Current - Reverse Leakage @ Vr :
- 10µA @ 100V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AA, SMB
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 30ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AA (SMB)
- Voltage - DC Reverse (Vr) (Max) :
- 100V
- Voltage - Forward (Vf) (Max) @ If :
- 900mV @ 2A
- Datasheet :
- ES2B-E3/52T
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Part | Manufacturer | Stock | Description |
---|---|---|---|
ES2B | ON Semiconductor | 6,000 | DIODE GEN PURP 100V 2A DO214AA |
ES2B | ON Semiconductor | 8,843 | DIODE GEN PURP 100V 2A DO214AA |
ES2B | ON Semiconductor | 8,843 | DIODE GEN PURP 100V 2A DO214AA |
ES2B | GS | 30,000 | Integrated Circuit |
ES2B M4G | Taiwan Semiconductor | 5,000 | DIODE GEN PURP 100V 2A DO214AA |
ES2B R5G | Taiwan Semiconductor | 3,400 | DIODE GEN PURP 100V 2A DO214AA |
ES2B R5G | Taiwan Semiconductor | 4,240 | DIODE GEN PURP 100V 2A DO214AA |
ES2B R5G | Taiwan Semiconductor | 4,240 | DIODE GEN PURP 100V 2A DO214AA |
ES2B-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 100V 2A SMB |
ES2B-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 100V 2A SMB |
ES2B-13 | Diodes Incorporated | 5,000 | DIODE GEN PURP 100V 2A SMB |
ES2B-13-F | Diodes Incorporated | 5,000 | DIODE GEN PURP 100V 2A SMB |
ES2B-13-F | Diodes Incorporated | 575 | DIODE GEN PURP 100V 2A SMB |
ES2B-13-F | Diodes Incorporated | 575 | DIODE GEN PURP 100V 2A SMB |
ES2B-E3/52T | Vishay Semiconductor/Diodes Division | 6,000 | DIODE GEN PURP 100V 2A DO214AA |