| BYG20D M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D R3G |
Taiwan Semiconductor |
1,800 |
DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D R3G |
Taiwan Semiconductor |
1,205 |
DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D R3G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 200V 1.5A DO214AC |
| BYG20D-E3/TR |
Vishay Semiconductor/Diodes Division |
18,000 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR |
Vishay Semiconductor/Diodes Division |
18,097 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR |
Vishay Semiconductor/Diodes Division |
18,097 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 |
Vishay Semiconductor/Diodes Division |
7,500 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 |
Vishay Semiconductor/Diodes Division |
7,500 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-E3/TR3 |
Vishay Semiconductor/Diodes Division |
7,500 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-M3/TR |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE AVALANCHE 200V 1.5A |
| BYG20D-M3/TR3 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE AVALANCHE 200V 1.5A |
| BYG20DE3TR3 |
VISHAY |
30,000 |
Integrated Circuit |
| BYG20DHE3_A/H |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE AVALANCHE 200V 1.5A DO214 |
| BYG20DHE3_A/I |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE AVALANCHE 200V 1.5A DO214 |
