| US1D M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D R3G |
Taiwan Semiconductor |
9,000 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D R3G |
Taiwan Semiconductor |
10,524 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D R3G |
Taiwan Semiconductor |
10,524 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 200V 1A SMA |
| US1D-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 200V 1A SMA |
| US1D-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 200V 1A SMA |
| US1D-13-F |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 200V 1A SMA |
| US1D-13-F |
Diodes Incorporated |
7,317 |
DIODE GEN PURP 200V 1A SMA |
| US1D-13-F |
Diodes Incorporated |
7,317 |
DIODE GEN PURP 200V 1A SMA |
| US1D-E3/5AT |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D-E3/5AT |
Vishay Semiconductor/Diodes Division |
6,374 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D-E3/5AT |
Vishay Semiconductor/Diodes Division |
6,374 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D-E3/61T |
Vishay Semiconductor/Diodes Division |
7,200 |
DIODE GEN PURP 200V 1A DO214AC |
| US1D-E3/61T |
Vishay Semiconductor/Diodes Division |
7,201 |
DIODE GEN PURP 200V 1A DO214AC |
