| US1M |
eic |
50,000 |
Integrated Circuit |
| US1M M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 1A DO214AC |
| US1M R3G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M R3G |
Taiwan Semiconductor |
1,289 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M R3G |
Taiwan Semiconductor |
1,289 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-13-F |
Diodes Incorporated |
380,000 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-13-F |
Diodes Incorporated |
386,660 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-13-F |
Diodes Incorporated |
386,660 |
DIODE GEN PURP 1KV 1A SMA |
| US1M-E3/5AT |
Vishay Semiconductor/Diodes Division |
7,500 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M-E3/5AT |
Vishay Semiconductor/Diodes Division |
11,803 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M-E3/5AT |
Vishay Semiconductor/Diodes Division |
11,803 |
DIODE GEN PURP 1KV 1A DO214AC |
| US1M-E3/61T |
Vishay Semiconductor/Diodes Division |
311,400 |
DIODE GEN PURP 1KV 1A DO214AC |
