| US1B M2G |
Taiwan Semiconductor |
5,000 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B R3G |
Taiwan Semiconductor |
3,600 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B R3G |
Taiwan Semiconductor |
3,880 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B R3G |
Taiwan Semiconductor |
3,880 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 100V 1A SMA |
| US1B-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 100V 1A SMA |
| US1B-13 |
Diodes Incorporated |
5,000 |
DIODE GEN PURP 100V 1A SMA |
| US1B-13-F |
Diodes Incorporated |
70,000 |
DIODE GEN PURP 100V 1A SMA |
| US1B-13-F |
Diodes Incorporated |
71,379 |
DIODE GEN PURP 100V 1A SMA |
| US1B-13-F |
Diodes Incorporated |
71,379 |
DIODE GEN PURP 100V 1A SMA |
| US1B-E3/5AT |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B-E3/5AT |
Vishay Semiconductor/Diodes Division |
6,840 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B-E3/5AT |
Vishay Semiconductor/Diodes Division |
6,840 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B-E3/61T |
Vishay Semiconductor/Diodes Division |
10,800 |
DIODE GEN PURP 100V 1A DO214AC |
| US1B-E3/61T |
Vishay Semiconductor/Diodes Division |
11,466 |
DIODE GEN PURP 100V 1A DO214AC |
