Series:
Package / Case:
Supplier Device Package:
Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
51,576 Records
Image Part Manufacturer Description Stock Action
HAT2256RWS-E Renesas Electronics America
MOSFET N-PAK 8SOP
5,000
In-stock
HAT2185WPWS-E Renesas Electronics America
MOSFET N-PAK WPAK
5,000
In-stock
HAT2173HWS-E Renesas Electronics America
MOSFET N-CH LFPAK...
5,000
In-stock
HAT2170HWS-E Renesas Electronics America
MOSFET N-CH LFPAK...
5,000
In-stock
HAT2168HWS-E Renesas Electronics America
MOSFET N-CH LFPAK...
5,000
In-stock
HAT2166HWS-E Renesas Electronics America
MOSFET N-CH LFPAK...
5,000
In-stock
HAT2165HWS-E Renesas Electronics America
MOSFET N-CH LFPAK...
5,000
In-stock
HAT2033RWS-E Renesas Electronics America
MOSFET N-CH SOP8
5,000
In-stock
HAT1127HWS-E Renesas Electronics America
MOSFET P-CH SOP8
5,000
In-stock
HAT1069C-EL-E Renesas Electronics America
MOSFET P-CH SMD
5,000
In-stock
HAT1047RWS-E Renesas Electronics America
MOSFET P-CH SOP8
5,000
In-stock
H5N2307LSTL-E Renesas Electronics America
MOSFET N-CH HS SW...
5,000
In-stock
H5N2007LSTL-E Renesas Electronics America
MOSFET N-CH HS SW...
5,000
In-stock
2SK3408-T1B-AT Renesas Electronics America
TRANS N-CH CMPAK-...
5,000
In-stock
2SJ690-T1B-AT Renesas Electronics America
MOSFET P-CH 30V TS...
5,000
In-stock
FDV304P-CGB8 ON Semiconductor
MOSFET P-CHANNEL
5,000
In-stock
IPL65R340CFDAUMA2 Infineon Technologies
LOW POWER_LEGACY
5,000
In-stock
IPD06P007NATMA1 Infineon Technologies
TRENCH 40<-<100V
5,000
In-stock
IPD06P005NATMA1 Infineon Technologies
TRENCH 40<-<100V
5,000
In-stock
IPD06P005LATMA1 Infineon Technologies
TRENCH 40<-<100V
5,000
In-stock
10 / 2579 Page, 51576 Records